N-ary Mask-Programmable Memory

ABSTRACT

The present invention discloses an N-ary mask-programmable memory (N-MPM). N-MPM cells can have N cell-states, with N&gt;2. N-MPM cells could be geometry-defined, junction-defined, or both. Based on an nF-opening process (n≧1), partial-contacts with feature size&lt;1F can be implemented with an nF-opening mask with feature size≧1F. N can be a non-integral power of 2. In this case, each memory cell represents fractional bits.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is related to a provisional application Ser. No. 60/700,037, entitled “N-ary Mask Programmable Memory”, Filed Jul. 15, 2005.

BACKGROUND

1. Technical Field of the Invention

The present invention relates to the field of integrated circuits, and more particularly to mask-programmable memory (MPM).

2. Prior Arts

With a large storage capacity, low cost and excellent security, mask-programmable memory (MPM) is considered as an ideal storage medium for multimedia contents and others. FIGS. 1A-1B illustrate two prior-art MPM cells. Among these, cell 1 aa, located at the intersection of upper address-selection line (ASL) 20 a and lower ASL 30 a, comprises no contact. It has large contact resistance and therefore, represents “0”. On the other hand, cell 1 ab comprises a full contact 3 ab. It has low contact resistance and represents “1”. These prior-art cells can have only two states: no-contact or full-contact. Thus, each cell can represent only one bit of digital information. As a result, the MPM storage density is limited. To increase the storage density, the present invention discloses an N-ary mask-programmable memory (N-MPM).

OBJECTS AND ADVANTAGES

It is a principle object of the present invention to improve the storage density of mask-programmable memory.

It is a further object of the present invention to form an N-ary mask-programmable memory by varying cell geometries.

It is a further object of the present invention to manufacture an N-ary mask-programmable memory using less expensive opening masks.

It is a further object of the present invention to form an N-ary mask-programmable memory by varying junction properties.

In accordance with these and other objects of the present invention, an N-ary mask-programmable memory is disclosed.

SUMMARY OF THE INVENTION

The present invention discloses an N-ary mask-programmable memory (N-MPM) (N>2). Its memory cells have N distinct cell-states. In other words, each of its memory cells can stay at one of these N cell-states. An N-MPM stores digital information as N-ary code. It has a larger storage density than a conventional binary MPM (2-MPM). An N-MPM can be geometry-defined, junction-defined, or both.

In a geometry-defined N-MPM, distinct cell-states are defined by varying cell geometries. Commonly varied cell geometry is contact-area, which is the final physical area on silicon where the upper address-selection line (ASL) makes electrical contacts with the lower ASL. To form N-MPM with N>2, besides no-contact and full-contact, partial-contact(s) are needed. In a partial-contact, contact-area is located within the ASL-overlapping-area (i.e. the overlapping area between the upper and lower ASL's). When an nF-opening process (F-ASL line width) is used, partial-contacts (feature size<1F) can be implemented with an nF(n≧1)-opening mask (feature size≧1F). This is because in this process, contact-area is formed at the intersection of the ASL-overlapping-area and contact-opening (i.e. the opening pattern formed in the photo-resist by the opening mask during the manufacturing process).

In a junction-defined N-MPM, distinct cell-states are defined by varying junction properties. A commonly varied junction property is doping profile. With different doping profiles, the cell IV characteristics vary. The read-out process comprises several read-phases. During different read-phases, the read voltages applied to the word line are different and smaller read voltages are applied first. If, during a read-phase, a cell-under-read is sensed as “1” (i.e. its read current is large enough to trigger the sense-amp), then during later read-phases, a current-limiting circuit will be turned on and limit the current flow through said cell. This can protect said cell from being damaged by excessively large current.

In an N-MPM, each cell could store an integral number of bits, or fractional number of bits. When N is an integral power of 2 (i.e. N=2^(n), n is an integer), each N-MPM cell can represent integral bits (i.e. n bit, n≧2 is an integer). When N is a non-integral power of 2 (i.e. N=2^(x), x is a non-integer), a plurality of cells are decoded collectively—in unit of word. Each word comprises m N-MPM cells (m—word-width, m≧2 is an integer). They are fed into an N-ary-to-binary encoder and converted into i binary bit, where i≦INT[log₂(N ^(m))] (INT[x] is the largest integer smaller than x). By averaging i bits into m cells, each N-MPM cell effectively represents fractional bits (referring to U.S. patent application Ser. No. 10/907,381, entitled “Fractional-Bit Systems”, filed Mar. 31, 2005).

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A illustrates two prior-art mask-programmable memory (MPM) cells 1 aa, 1 ab; FIG. 1B is the cross-sectional view of cells 1 aa, 1 ab;

FIG. 2 illustrates a preferred N-ary MPM (N-MPM);

FIGS. 3AA-3AC is a top view, y-z cross-sectional view and z-x cross-sectional view of a first preferred geometry-defined N-MPM cell; FIGS. 3BA-3BC is a top view, y-z cross-sectional view and z-x cross-sectional view of a second preferred geometry-defined N-MPM cell; FIGS. 3CA-3CC is a top view, y-z cross-sectional view and z-x cross-sectional view of a third preferred geometry-defined N-MPM cell;

FIGS. 4A-4D illustrate the manufacturing steps of a preferred nF-opening process;

FIGS. 5A-5B illustrate two preferred 4-ary MPM (4-MPM) with merged openings;

FIGS. 6A-6C illustrate three preferred read-out circuits for an N-MPM;

FIG. 7 illustrates two sets of preferred contact-area ratios (r) for a 4-MPM;

FIG. 8A illustrates a preferred junction-defined N-MPM; FIG. 8B illustrates its IV characteristics;

FIGS. 9A-9C illustrate a preferred manufacturing process of a junction-defined N-MPM;

FIG. 10A illustrates a preferred read-out circuit for a junction-defined N-MPM; FIG. 10B illustrates a preferred current-limiting circuit; FIG. 10C is a timing-diagram of the word-line voltage and bit-line voltage during read;

FIG. 11 illustrates a preferred three-dimensional (3-D) N-MPM;

FIG. 12 illustrates a preferred fractional-bit-based N-MPM.

This disclosure is focused on opening patterns and read-out circuits of N-MPM. In some cross-sectional drawings, diode layers (or other ROM layers) of the N-MPM are intentionally left un-drawn. Details on these layers can be found in U.S. Pat. No. 5,835,396, “Three-Dimensional Read-Only Memory”; U.S. Pat. No. 6,717,222, “Three-Dimension Memory”, both by the same inventor.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Those of ordinary skills in the art will realize that the following description of the present invention is illustrative only and is not intended to be in any way limiting. Other embodiments of the invention will readily suggest themselves to such skilled persons from an examination of the within disclosure.

The present invention discloses an N-ary mask-programmable memory (N-MPM) (N>2). Its memory cells have N distinct cell-states. In other words, each of its memory cells can stay at one of these N cell-states. As illustrated in FIG. 2, the memory cells 1 ba-1 bc of this 3-MPM (N-MPM with N=3) have 3 distinct cell-states, which are denoted by different shadings in cell areas 5 ba-5 bc. An N-MPM stores digital information as N-ary code. For example, number 11₁₀ is stored in a 3-MPM as 102₃. Here, expression C_(N) means that code C is an N-ary code, e.g. 11₁₀ means code 11 is a 10-ary code; 102₃ means code 102 is a 3-ary code. Because it takes three 3-MPM cells to store a number like 11₁₀ (11₁₀=102₃), but four cells in 2-MPM (11₁₀=1011₂), 3-MPM has a larger storage density than 2-MPM. Apparently, with a larger N, the storage density of the N-MPM becomes larger.

FIGS. 3AA-3CC illustrate a first preferred N-MPM type-geometry-defined N-MPM. In a geometry-defined N-MPM, distinct cell-states are defined by varying cell geometries. Commonly varied cell geometry is contact-area, which is the final physical area on silicon where the upper address-selection line (ASL) makes electrical contacts with the lower ASL. To form N-MPM with N>2, besides no-contact and full-contact, partial-contact(s) are needed.

Referring now to FIGS. 3AA-3AC, a first preferred geometry-defined N-MPM cell 1 bd is illustrated. It uses a partial-contact and its contact-area “efgh” 2 bd is located near the center of the ASL-overlapping-area “abcd” (i.e. the overlapping area between the upper ASL 20 b and lower ASL 30 d). The contact-area ratio r, defined as the areal ratio between the contact-area “efgh” and ASL-overlapping-area “abcd”, can be expressed as: r=(contact-area)/(ASL-overlapping-area)=f/F where F is the ASL line width. Accordingly, contact resistance R_(c) of cell 1 bd is ˜1/r larger than a cell with full-contact (e.g. cell 1 ab of FIG. 1A), but much smaller than a cell with no-contact (e.g. cell 1 aa of FIG. 1A).

To implement the partial contact of FIG. 3AA, the preferred embodiment of FIGS. 3AA-3AC needs to use a sub-1F-opening mask (feature size<1F), which could be expensive. On the other hand, based on an nF-opening process (referring to FIGS. 4A-4D for details), an nF(n≧1)-opening mask (feature size≧1F) can be used to implement the same partial contact. This is illustrated in FIGS. 3BA-3CC.

FIGS. 3BA-3BC illustrate a second preferred geometry-defined N-MPM cell 1 bd′. Its contact-opening “ijkl” 3 bd′ (i.e. the opening pattern formed in the photo-resist by the opening mask during the manufacturing process) has a feature size of 1F, i.e. a dimension of 1F×1F. It is shifted against the upper ASL 20 b by an offset S(=1F−f) along the −y direction. Based on an nF-opening process, the final contact-area “ijcd” 2 bd′ is formed at the intersection of ASL-overlapping-area “abcd” and contact-opening “ijkl” 3 bd′ and has a dimension of f×1F; same in size as the contact-area 2 bd of FIG. 3AA. In this preferred embodiment, the contact-area 2 bd′ is located at the edge of the ASL-overlapping-area “abcd”, and one of its contact-edges “cd” (i.e. edge of contact-area) coincides with a line-edge “vw” of the upper ASL 20 b.

FIGS. 3CA-3CC illustrate a third preferred geometry-defined N-MPM cell 1 bd″. Its contact-opening “mnop” 3 bd″ has a feature size of >1F; i.e. a dimension of nF×n′F, with both n, n′>1. Compared with FIG. 3BA, the contact-opening 3 bd″ not only expands along the −y direction, but also along +x and −x directions. Based on an nF-opening process, the final contact-area 2 bd″ is formed at the intersection of ASL-overlapping-area “abcd” and contact-opening “mnop” 3 bd″. As long as the contact-opening 3 bd″ overlaps with the upper ASL 20 b by f along the y direction, the contact-area 2 bd″ still has a dimension of f×1F, same as FIG. 3AA. Similarly, the contact-area 2 bd″ is located at the edge of the ASL-overlapping-area.

In FIGS. 3BA-3CC, the feature size of contact-openings 3 bd′, 3 bd″ is ≧1F Accordingly, the opening mask associated with these contact-openings is referred to as nF(n≧1)-opening mask. Apparently, nF-opening mask is less expensive than the sub-1F-opening mask (used for FIGS. 3AA-3AC). Furthermore, in FIG. 3CA, the final shape of the contact-area 2 bd″ is only defined by contact-edge “ij”, not by any other contact-edges (e.g. “mo”, “op”). As a result, during the making of the opening mask, except for “ij”, contact-opening does not require critical edge control. Namely, the nF-opening mask could be a low-precision mask. This can further help drive down the mask cost.

Referring now to FIGS. 4A-4D, a preferred manufacturing process for the N-MPM structure in FIGS. 3CA-3CC is disclosed. Because it uses an nF-opening mask, this process is also referred to as nF-opening process. FIGS. 4A-4C are the z-x cross-sectional views; FIG. 4D is the y-z cross-sectional view. It comprises the following steps:

A) Deposit a first N-silicon layer 30 d 4, a conductive layer 30 d 3, a second N-silicon layer 30 d 2 and a polish-stop layer 30 d 1. The polish-stop layer 30 d 1 (e.g. silicon nitride) is optional and can act as a stop layer for the CMP step. After the deposition, etch these layers to form the lower ASL's 30 c, 30 d and fill in an intra-level dielectric 35 there-between. Next, perform a CMP step until the polish-stop layer 30 d 1 is exposed.

B) Deposit an insulating dielectric 16 on top of the planarized lower ASLs 30 c, 30 d. Apply the nF-opening mask and remove the insulating dielectric 16 at selected locations (e.g. 3 bd″). Because n>1, the resultant contact-opening 3 bd″ has dimensions (nF, n′F; with n, n′>1) larger than the ASL (e.g. 30 d) width (1F).

C) Remove the polish-stop layer 30 d 1 until the second N-silicon layer 30 d 2 is exposed. Deposit a first P-silicon layer 20 b 4, another conductive layer 20 b 3, a second P-silicon layer 20 b 2, and another polish-stop layer 20 b 1. Etch these layers to form the upper ASL 20 b.

From the above processing steps, it can be observed that, in an nF-opening process, contact-area is formed at the intersection of ASL-overlapping-area and contact-opening. As a result, contact-openings can expand outside the ASL-overlapping-area. Furthermore, they can merge with contact-openings from adjacent cells and form a single opening.

Referring now to FIGS. 5A-5B, two preferred 4-MPM cells with merged openings are disclosed. In FIG. 5A, 4-MPM cells 1 ca, 1 cb, 1 cc, 1 cd represent “0₄”, “1₄”, “2₄”, “3₄”, respectively. This is realized by shifting the contact-openings 3 ca, 3 cb, 3 cc, 3 cd against the ASL 20 c by different offsets, e.g. 1F, ⅔F, ⅓F, 0. In this preferred embodiment, adjacent upper ASLs (e.g. 20 c and 20 d) are grouped into an ASL-pair 20 c/20 d; and contact-openings on this ASL-pair 20 c/20 d are shifted towards each other. For example, contact-opening 3 cb is shifted towards 3 db by −2F/3, while contact-opening 3 db is shifted towards 3 cb by +2F/3; they naturally merge into a single opening 5 b (enclosed by thick dark line). For another example, contact-opening 3 cc is shifted towards 3 dc by −F/3, while contact-opening 3 dc is shifted towards 3 cc by +F/3. Based on the nF-opening process, contact-openings 3 cc, 3 dc can expand outside the ASL-overlapping-area. After the expansion, they are merged into a single opening 5 c (enclosed by thick dark line). Note the y dimensions of all openings in FIG. 5A are >1F.

In FIG. 5B, openings 5 a-5 d of FIG. 5A can further expand along the +x and −x directions until they merge with their respective neighbors. For example, opening 5 c can expand towards +x direction until it merges with 5 d; it can also expand towards the −x direction until it merges with 5 b. In fact, all openings 5 a-5 d on the ASL-pair 20 c/20 d can be merged into a single opening 7 (enclosed by thick dark line). Its minimum feature size is 5F/3 (at the location of opening 5 b). Apparently, the opening-mask associated with this preferred embodiment has a significantly lower cost. It should be noted that the rightmost and leftmost edges of the opening 7 can still further expand (to right and left, respectively) and merge with openings not shown on this drawing sheet. It is also possible for opening 7 to merge with openings from adjacent ASL-pairs.

Referring now FIGS. 6A-6C, three preferred read-out circuits for an N-MPM are disclosed. They use dummy cells to provide reference bit-line voltage. Similar to memory cells, dummy cells comprise contact-areas with different r values. In FIGS. 6A-6B, the dummy cells have r values different from memory cells; in FIG. 6C, the dummy r values are same as memory cells. In these figures, numbers in double quotes are the code value stored at a cell; numbers in parentheses are its r value.

FIG. 6A illustrates a first preferred read-out circuit. Each N-MPM unit array needs at least N−1 dummy bit-lines. This preferred embodiment comprises four data bit-lines 30 a-30 d (collectively referred to as data group 30DT) and three dummy bit-lines 32 a-32 c (collectively referred to as dummy group 32DY). The dummy r values are between those of memory cells, e.g. the dummy r values are ⅙, ½, and ⅚; while the data r values are 0, ⅓, ⅔ and 1. The read-out circuit further comprises a column decoder (or a mux) 6 and an A/D converter 10. The column decoder 6 comprises switches 6 a-6 d, only one of which is allowed to turn on each time. The A/D converter 10 comprises comparators 8 x-8 z.

The read-out sequence for this preferred embodiment works as follows. To read out cell 1 cc, switch 6 c in the column decoder 6 is turned on. Bit-line signal 30 c is sent to signal line 11 and then to the A/D converter 10. It is further compared with the dummy bit-line signals 32 a-32 c at each comparator 8 x-8 z. Because cell 1 cc carries “2₄”, the A/D converter output 2 x-2 y is 1, 1, 0. This output can be used to retrieve digital information stored at cell 1 cc.

FIG. 6B illustrates a second preferred read-out circuit. In this preferred embodiment, each data bit-line 30 a-30 d is connected with one input of comparator 8 a-8 d; each dummy bit-line (32 a-32 c) is connected to signal line 13 through a column decoder (or a mux) 4; signal line 13 is fed into the other input of all comparators 8 a-8 d. The column decoder 4 comprises switches 4 a-4 c, only one of which is allowed to turn on each time. Optionally, a 1× driver 15 can be added to signal line 13 to help drive the inputs of comparators 8 a-8 d. Each read action needs at least N−1 (i.e. 3 for this preferred embodiment) read cycles:

A) During the first read cycle, only switch 4 a is turned on. Dummy signal 32 a is compared with data bit-line signals 30 a-30 d at comparators 8 a-8 d. The outputs 2 a-2 d are 0, 1, 1, 1 and stored in a first buffer.

B) During the second read cycle, only switch 4 b is turned on. Dummy signal 32 b is compared with data bit-line signals 30 a-30 d at each comparators 8 a-8 d. The outputs 2 a-2 d are 0, 0, 1, 1 and stored in a second buffer.

C) During the third read cycle, only switch 4 c is turned on. Dummy signal 32 b is compared with data bit-line signals 30 a-30 d at comparators 8 a-8 d. The outputs 2 a-2 d are 0, 0, 0, 1 and stored in a third buffer.

D) Finally, outputs stored in the first, second and third buffers are used to calculate back digital information stored at cells 1 ca-1 cd.

FIG. 6C illustrates a third preferred read-out circuit. Instead of using dummy cells with r values different from memory cells (FIGS. 6A-6B), the dummy cells 1 c 0′-1 c 3′ in this preferred embodiment use the same r values as memory cells 1 ca-1 cd, i.e. 0, ⅓, ⅔, and 1. Each N-MPM unit array needs N dummy bit-lines. Decoder (or a mux) 14 comprises three switch signals 14 a-14 c. Each switch signal (e.g. 14 a) can simultaneously turn on two switches (e.g. 4 e and 4 f) and connect two bit-lines (e.g. 34 a and 34 b) to a same signal line 13. Because of this, the voltage on signal line 13 is effectively the average voltage of these two bit-lines (e.g. 34 a and 34 b). Thus, the equivalent dummy r value during this read cycle is ⅙, same as dummy cell 1 c 0. The rest of read-out operation is same as that in FIG. 6B. Because dummy cells use the same r values as memory cells, the opening mask becomes easier to make. This can help further reduce the mask cost.

Referring now to FIG. 7, two sets of preferred r values for a 4-MPM are disclosed. In the first set, r values are evenly distributed between 0 (no-contact) and 1 (full-contact). This r distribution is suitable for an ideal manufacturing condition, e.g. there is no mis-alignment during lithography. For the second set, r values are distributed un-evenly, e.g. the first r increment (Δr) (Δr=0.37 from “0₄” to “1₄”) is larger than the middle Δr (Δr=0.27 from “1₄” to “2₄”). This r set can better accommodate mis-alignment during lithography and provide a wider process margin. For example, if the upper-ASL mask is mis-aligned to the opening mask by 10% along −y direction (FIG. 5B), for the first r set, the effective r values for “0₄”-“3₄” cells become 0.1, 0.43, 0.77, 1 (on silicon) and Δr could be as small as 0.23; for the second r set, the effective r values are 0.1, 0.47, 0.74, 1 (on silicon) and the smallest Δr is 0.26, larger than the first set. A larger Δr can reduce the complexity in read-out circuit design. Eq. (1) discloses a preferred method to calculate r values for memory cells, taking into account of mis-alignment: r[0_(N)]=0 r[i _(N) ]=MA+i×x (i=1 . . . N−2); r[(N−1)_(N)]=1, and x=(1−2×MA)/(N−1),  Eq. (1) where, MA is the maximum allowed mis-alignment in unit of F

Besides geometry-defined, N-MPM can also be junction-defined. In a junction-defined N-MPM, distinct cell-states are defined by varying junction properties. A commonly varied junction property is doping profile. With different doping profiles, the cell IV characteristics vary. FIG. 8A illustrates a preferred junction-defined N-MPM. It is a 3-MPM and its cells 1 ba-1 bc have different junction properties: junction 3 ba in cell 1 ba is more heavily doped than junction 3 bb in cell 1 bb; and junction 3 bc in cell 1 bc comprises an insulating dielectric 16. Accordingly, cell 1 ba conducts more current than cell 1 bb, and cell 1 bc conducts no current; for the same read current I_(R), cell 1 bb needs a larger read voltage V_(R2) than cell 1 ba, i.e. V_(R1) (FIG. 8B).

FIGS. 9A-9C illustrate a preferred manufacturing process of a junction-defined N-MPM. It comprises the following steps: A) form lower ASL's 30 a, 30 b, 30 c. Each lower ASL comprises an N-layer 3 ba-3 bc. At this step, all these N-layers 3 ba-3 bc have the same doping profile. After this, form an insulating dielectric 16 on top of the lower ASL's (FIG. 9A); B) apply a first opening mask and etch away the insulating dielectric 16 in cell area 1 ba. Perform ion implantation, which will increase the doping concentration in junction 3 ba (FIG. 9B); C) apply a second opening mask and etch away the insulating dielectric 16 in cell 1 bb (FIG. 9C); D) Remove photo-resist and form top ASL 20 b, including P-layer 3 b (FIG. 8A).

FIG. 10A illustrates a preferred read-out circuit for a junction-defined N-MPM. The larger diode 7 ba drawn at cell 1 ba represents a larger current-conductivity of cell 1 ba. Each bit line (e.g. 30 a) is connected to a sense-amp (e.g. 8 a) and a current-limiting circuit (e.g. 32 a). The sense-amp 8 a flips its output 2 a when the voltage-rise on ASL 30 a (i.e. bit line) exceeds a threshold-voltage. The current-limiting circuit 32 a limits the current flow through the diode 7 ba. As is illustrated in FIG. 10B, it may comprise a switch 34 a and a voltage source V_(H). The switch 34 a is controlled by the output 2 a of the sense-amp 8 a. When the output 2 a is high, the switch 34 a is turned on and the voltage on ASL 30 a becomes tied to V_(H).

FIG. 10C is a timing-diagram of the word-line voltage and bit-line voltage. This read-out process comprises two read-phases T1, T2. During T1, read voltage V_(R1) is applied to word line (i.e. ASL 20 b). Cell 1 ba conducts the read current I_(R). When its bit line (i.e. ASL 30 a) voltage rises above the threshold-voltage V_(T), cell 1 ba is sensed as “1”. On the other hand, cell 1 bb conducts less current than 1 ba and cannot trigger the sense-amp 8 b during T1, neither does 1 bc. They are sensed as “0”. During T2, read voltage V_(R2) (V_(R2)>V_(R1)) is applied to word line 20 b. With this larger read voltage (FIG. 8B), cell 1 bb conducts the read current I_(R) and is sensed as “1”, while cell 1 bc still conducts no current and is again sensed as “0”. It should be noted that during T2, current-limiting circuit 32 a for cell 1 ba is turned on. As a result, the voltage on bit line 30 a rises to V_(H) and voltage drop on the diode 7 ba becomes V_(R2)-V_(H). With a smaller voltage drop, the current flow through the diode 7 ba can be small enough to cause any damage thereto. After T1, T2, information stored in cells 1 ba-1 bc can be calculated back based on the outputs 2 a-2 c obtained in these read-phases.

Besides geometry-defined and junction-defined N-MPM's, other forms of N-MPM may be used. One example is hybrid N-MPM. It combines geometry-defined N-MPM and junction-defined N-MPM. To be more specific, both of its cell geometries and junction properties are varied for different cell-states. As a result, an even large number of bits can be stored in each cell.

Referring now to FIG. 11, a preferred three-dimensional (3-D) N-MPM is disclosed. 3-D MPM (also known as 3D-ROM) has been disclosed in details in U.S. Pat. No. 5,835,396, entitled “Three-dimensional read-only memory”; U.S. Pat. No. 6,717,222, entitled “Three-dimensional memory”, both by the same inventor. In this preferred embodiment, 3D-ROM structure 00 comprises two memory levels 100, 200. Memory level 100 is stacked above the substrate 0 and memory level 200 is stacked above the memory level 100. Upper ASL 231, insulating dielectric 253, and lower ASL 220 form N-MPM cells. 3-D N-MPM combines N-ary storage with 3-D stacking and will achieve a storage density far larger than any known solid-state storage: with 8-level and 2-bit/cell, its storage density can reach as high as ˜5 GByte/cm² at the 90 nm node.

In an N-MPM, each cell could store an integral number of bits, or fractional number of bits. When N is an integral power of 2 (i.e. N=2^(n), n is an integer), each N-MPM cell can represent integral bits (i.e. n bit, n≧2 is an integer). When N is a non-integral power of 2 (i.e. N=2^(x), x is a non-integer), a plurality of cells are decoded collectively—in unit of word. As is illustrated in FIG. 12, each word 80 comprises m N-MPM cells 80 a, 80 b . . . 88 m (m—word-width, m≧2 is an integer). They are fed into an N-ary-to-binary encoder 84 and converted into i binary bit 88 (comprising 88 a, 88 b . . . 88 i), where i≦INT[log₂(N ^(m))] (INT[x] is the largest integer smaller than x). By averaging i bits into m cells, each N-MPM cell effectively represents fractional bits.

Details on fractional-bit-based N-MPM can be found in the co-pending U.S. patent application Ser. No. 10/907,381, entitled “Fractional-Bit Systems”, filed Mar. 31, 2005 by the same inventor. Below are some conclusions drawn in the aforementioned application:

1) Preferably the system efficiency β=INT[log₂(N^(m))]/log₂(N^(m))≧90%, namely,

-   -   A) for N=5, m≧4;     -   B) for N=7, 11, 15, m≧3;     -   C) for N=6, 12, 13, 14, m≧2; or     -   D) for N=9, 10, m≧1.         or,

2) Preferably the system efficiency β=INT[log₂(N^(m))]/log₂(N^(m)) reaches local maximum, namely,

-   -   A) for N=5, m=4, 7, 10, 13, 16, 19, 22, 25, 28, or 32;     -   B) for N=6, m=2, 4, 7, 9, 12, 14, 16, 19, 21, 24, 26, 28, or 31;     -   C) for N=7, m=5, 10, 15, 20, 25, or 31;     -   D) for N=9, m=6, 12, 18, 24, or 30;     -   E) for N=10, m=4, 7, 10, 13, 16, 19, 22, 25, or 28;     -   F) for N=11, m=3, 5, 7, 9, 11, 14, 16, 18, 20, 22, 24, 27, 29,         or 31;     -   G) for N=12, m=2, 4, 7, 9, 12, 14, 16, 19, 21, 24, 26, 28, or         31;     -   H) for N=13, m=3, 6, 10, 13, 16, 20, 23, 26, or 30;     -   I) for N=14, m=5, 10, 15, 20, 25, or 31; or     -   J) for N=15, m=10, 21, or 32.

While illustrative embodiments have been shown and described, it would be apparent to those skilled in the art that may more modifications than that have been mentioned above are possible without departing from the inventive concepts set forth therein. The invention, therefore, is not to be limited except in the spirit of the appended claims. 

1. An N-ary mask-programmable memory, comprising: a plurality of lower address-selection lines; a plurality of upper address-selection lines above said lower address-selection lines; and a plurality of mask-programmable memory cells located at the intersections of said lower and upper address-selection lines, said memory cells having N distinct cell-states with N>2.
 2. The N-ary mask-programmable memory according to claim 1, wherein each of said cell-states conducts a distinct read current at a same read voltage.
 3. The N-ary mask-programmable memory according to claim 1, wherein each of said cell-states has a distinct geometry.
 4. The N-ary mask-programmable memory according to claim 1, further comprising: a first memory cell having a first contact-area; a second memory cell having a second contact-area, said second contact-area being larger in size than said first contact-area; and a third memory cell having a third contact-area, said third contact-area being larger in size than said second contact-area.
 5. The N-ary mask-programmable memory according to claim 4, further comprising an upper and lower address-selection lines, wherein said upper address-selection line makes electrical contact with said lower address-selection line at said first contact-area, and said first contact-area is located at an edge of said upper address-selection line.
 6. The N-ary mask-programmable memory according to claim 4, further comprising a first and second upper address-selection lines, wherein: said first upper address-selection line is parallel and adjacent to said second upper address-selection line; said first contact-area is located at a first edge of said first upper address-selection line; said second contact-area is located at a second edge of said second upper address-selection line; and said first edge faces towards said second upper address-selection line and said second edge faces towards said first upper address-selection line.
 7. The N-ary mask-programmable memory according to claim 1, further comprising: an insulating dielectric between said lower and upper address-selection lines; and an opening in said insulating dielectric, selected one(s) of said upper address-selection lines making electrical contact(s) with selected one(s) of said lower address-selection lines through said opening; wherein said opening intersects at least two lower address-selection lines or at least two upper address-selection lines.
 8. The N-ary mask-programmable memory according to claim 4, wherein the size difference between said second and first contact-areas is not equal to the size difference between said third and second contact-areas.
 9. The N-ary mask-programmable memory according to claim 4, further comprising a dummy cell having a dummy contact-area, wherein the size of said dummy contact-area is between said first and second contact-areas.
 10. The N-ary mask-programmable memory according to claim 1, wherein each of said cell-states has a distinct junction.
 11. The N-ary mask-programmable memory according to claim 1, further comprising a first and second memory cells, wherein said first and second memory cells have different doping profiles.
 12. The N-ary mask-programmable memory according to claim 11, further comprising a current-limiting circuit in connection with said first cell for limiting the current flow in said cell.
 13. The N-ary mask-programmable memory according to claim 1, wherein at least two read voltages are applied in sequence to selected ones of said memory cells during read.
 14. The N-ary mask-programmable memory according to claim 1, further comprising a plurality of dummy cells and a plurality of comparators, wherein the output from a selected one of said memory cells is compared with the output from a selected one of said dummy cells at a selected one of said comparators.
 15. The N-ary mask programmable memory according to claim 14, further comprising: a first and second dummy cells; and a first and second comparators, each comparator comprising a first and second inputs; wherein, said first inputs of said first and second comparators are from a selected one of said memory cells; said second input of said first comparator is from said first dummy cell; said second input of said second comparator is from said second dummy cell.
 16. The N-ary mask programmable memory according to claim 14, further comprising: a first and second dummy cells; and a first and second comparators, each comparator comprising a first and second inputs; wherein, said first input of said first comparator is from a first selected one of said memory cells; said first input of said second comparator is from a second selected one of said memory cells; said second inputs of said first and second comparators are from a selected one of said first and second dummy cells.
 17. The N-ary mask-programmable memory according to claim 1, further comprising: a first and second memory cells; a first dummy cell in contact with a first dummy address-selection line and having the same structure as said first memory cell; and a second dummy cell in contact with a second dummy address-selection line and having the same structure as said second memory cell; wherein said first and second dummy address-selection lines can be connected together.
 18. The N-ary mask-programmable memory according to claim 1, further comprising: a first memory level; and a second memory level stacked above said first memory level; wherein at least one of said first and second memory levels comprises said N-ary mask-programmable memory cells.
 19. The N-ary mask-programmable memory according to claim 1, wherein N is an integral power of
 2. 20. The N-ary mask-programmable memory according to claim 1, wherein N is a non-integral power of
 2. 